2N5401 transistor
2N5401 is a PNP transistor designed specifically for high voltage - low power switching applications and amplifications.
- High collector breakdown voltage
- With DC Current Gain (hFE) up to 100
- Maximum voltage across collector and emitter: 150V
- Maximum current allowed trough collector: 600mA
- Maximum voltage across collector and base: 160 V
- Maximum voltage across base and emitter: 5V
- Operating temperature range: -55ºC to +150ºC
- Maximum power dissipation : 0.62 W
weight:
20.0
Product Condition:
New
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