Type Designator: 2SC1384
Transistor 2SC1384 Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SA683 and 2SA684 5.9± 0.2 4.9± 0.2
Features Low collector to emitter saturation voltage VCE(sat).
Complementary pair with 2SA683 and 2SA684. 0.7± 0.1
Absolute Maximum Ratings (Ta=25˚C) 2.54± 0.15
Parameter Symbol Ratings Unit

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO92

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